Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology

摘要

In this study, we suggest a hierarchical model to\udinvestigate the electrical performance of carbon nanotube (CNT)-\udbased interconnects. From the density functional theory, we have\udobtained important physical parameters, which are used in TCAD\udsimulators to obtain the RC netlists. We then use these RC netlists\udfor the circuit-level simulations to optimize interconnect design in\udVLSI. Also, we have compared various CNT-based interconnects\udsuch as single-walled CNTs, multi-walled CNTs, doped CNTs, and\udCu-CNT composites in terms of conductivity, ring oscillator delay,\udand propagation time delay.